vs-60epu02pbf, vs-60epu02-n3, vs-60apu02pbf, vs-60APU02-N3 www.vishay.com vishay semiconductors revision: 15-aug-11 1 document number: 94021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast soft recovery diode, 60 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? output rectification ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) benefits ? reduced rfi and emi ? higher frequency operation ? reduced snubbing ? reduced parts count description/applications these diodes are optimized to reduce losses and emi/rfi in high frequency power conditioning systems. the softness of the recovery eliminates the need for a snubber in most applications. these devices are ideally suited for hf welding, po wer converters and other applications where switchin g losses are not significant portion of the total losses. product summary package to-247ac, to-247ac modified (2 pins) i f(av) 60 a v r 200 v v f at i f 1.08 v t rr typ. see recovery table t j max. 175 c diode variation single die to-247ac modified to-247ac 2 1 3 cathode anode base common cathode 2 anode 1 anode 3 base common cathode vs-60epu02pbf vs-60apu02pbf vs-60epu02-n3 vs-60APU02-N3 absolute maximum ratings parameter symbol test conditions values units cathode to anode voltage v r 200 v continuous forward current i f(av) t c = 127 c 60 a single pulse forward current i fsm t c = 25 c 800 maximum repetitive forward current i frm square wave, 20 khz 120 operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 60 a - 0.98 1.08 i f = 60 a, t j = 175 c - 0.81 0.88 reverse leakage current i r v r = v r rated - - 50 a t j = 150 c, v r = v r rated - - 2 ma junction capacitance c t v r = 200 v - 87 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
vs-60epu02pbf, vs-60epu02-n3, vs-60apu02pbf, vs-60APU02-N3 www.vishay.com vishay semiconductors revision: 15-aug-11 2 document number: 94021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t c = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 200 a/s, v r = 30 v - - 35 ns t j = 25 c i f = 60 a di f /dt = 200 a/s v r = 160 v -28- t j = 125 c - 50 - peak recovery current i rrm t j = 25 c - 4 - a t j = 125 c - 8 - reverse recovery charge q rr t j = 25 c - 59 - nc t j = 125 c - 220 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units thermal resistance, junction to case r thjc --0.70 k/w thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.2- weight -5.5- g -0.2-oz. mounting torque --1.2n ? m marking device case style to-247a c modified 60epu02 case style to-247ac 60apu02
vs-60epu02pbf, vs-60epu02-n3, vs-60apu02pbf, vs-60APU02-N3 www.vishay.com vishay semiconductors revision: 15-aug-11 3 document number: 94021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics 1 10 1000 0 2.5 1.5 1 v f - forward voltage drop (v) i f - instantaneous forward current (a) 100 0.5 2 t j = 175 c t j = 150 c t j = 25 c 0.01 0.1 1 10 100 0 100 v r - reverse voltage (v) i r - reverse current (a) t j = 25 c 50 0.001 1000 200 150 t j = 125 c t j = 175 c 100 1000 0 100 1000 10 v r - reverse voltage (v) c t - junction capacitance (pf) 10 10 000 t j = 25 c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) single pulse (thermal resistance) . . p dm t 1 t 2 notes: 1. duty factor d = t 1 /t 2 2. peak t j = p dm x z thjc + t c 10 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
vs-60epu02pbf, vs-60epu02-n3, vs-60apu02pbf, vs-60APU02-N3 www.vishay.com vishay semiconductors revision: 15-aug-11 4 document number: 94021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 80 % rated v r 0204060 allowable case temperature (c) i f(av) - average forward current (a) 140 160 180 see note (1) 120 dc 100 80 100 square wave (d = 0.50) 80 % rated v r applied 170 110 130 150 0 40 60 80 100 average power loss (w) i f(av) - average forward current (a) 0 40 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc 20 20 60 80 100 rms limit 10 100 1000 t rr (ns) di f /dt (a/s) 40 60 30 50 70 0 20 v r = 160 v t j = 125 c t j = 25 c i f = 90 a i f = 60 a i f = 30 a 100 1000 q rr (nc) di f /dt (a/s) 600 400 800 v r = 160 v t j = 125 c t j = 25 c 0 200 i f = 30 a i f = 60 a i f = 90 a 700 500 300 100
vs-60epu02pbf, vs-60epu02-n3, vs-60apu02pbf, vs-60APU02-N3 www.vishay.com vishay semiconductors revision: 15-aug-11 5 document number: 94021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
vs-60epu02pbf, vs-60epu02-n3, vs-60apu02pbf, vs-60APU02-N3 www.vishay.com vishay semiconductors revision: 15-aug-11 6 document number: 94021 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per t/r minimum order quantity packaging description vs-60epu02pbf 25 500 antistatic plastic tube vs-60epu02-n3 25 500 antistatic plastic tube vs-60apu02pbf 25 500 antistatic plastic tube vs-60APU02-N3 25 500 antistatic plastic tube links to related documents dimensions to-247ac modified www.vishay.com/doc?95253 to-247ac www.vishay.com/doc?95223 part marking information to-247ac modified pbf www.vishay.com/doc?95255 to-247ac modified -n3 www.vishay.com/doc?95442 to-247acpbf www.vishay.com/doc?95226 to-247ac-n3 www.vishay.com/doc?95007 spice model www.vishay.com/doc?95416 2 - current rating (60 = 60 a) 4 - package: p = to-247ac (modified) 5 - type of silicon: u = ultrafast recovery 6 - voltage rating (02 = 200 v) 3 - circuit configuration: e = single diode a = single diode, 3 pins device code 5 1 3 2 4 6 7 vs- 60 e p u 02 pbf 1 - vishay semiconductors product 7 - environmental digit: pbf = lead (pb)-free and rohs compliant -n3 = halogen-free, rohs compliant and totally lead (pb)-free
outline dimensions www.vishay.com vishay semiconductors revision: 16-jun-11 1 document number: 95223 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera ncing per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 fk 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc 0.10 a c m m e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c ? k b d m m a (6) ? p (datum b) fp1 d1 (4) 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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